YXC75B Series

0R5

0.5

A 

        B 

        C

        D

500V

3R3

3.3

A

        B

        C

        D

500V

240

24

F
G
J
K

500V

181

180

F
G
J
K

300V

0R6

0.6

3R6

3.6

270

27

201

200

0R7

0.7

3R9

3.9

300

30

221

220

200V

0R8

0.8

4R3

4.3

330

33

241

240

0R9

0.9

4R7

4.7

360

36

271

270

1R0

1.0

5R1

5.1

390

39

301

300

1R1

1.1

5R6

5.6

430

43

331

330

1R2

1.2

6R2

6.2

470

47

361

360

1R3

1.3

6R8

6.8

510

51

391

390

1R4

1.4

7R5

7.5

560

56

431

430

1R5

1.5

8R2

8.2

620

62

471

470

1R6

1.6

9R1

9.1

B

        C

        J 

       K

680

68

511

510

100V

1R7

1.7

100

10

750

75

561

560

1R8

1.8

110

11

820

82

621

620

1R9

1.9

120

12

910

91

681

680

50V

2R0

2.0

130

13

F
G
J
K

101

100

751

750

2R1

2.1

150

15

111

110

300V

821

820

2R2

2.2

160

16

121

120

911

910

2R4

2.4

180

18

131

130

102

1000

2R7

2.7

200

20

151

150

3R0

3.0

220

22

161

160

Quality Factors(Q)

2000 min.

Insulation Resistance(IR)

10⁵ Megohms min. @ +25°C at rated WVDC.  10⁴ Megohms min. @ +125°C at rated WVDC.

Rated Voltage(WVDC)

see above tables

Dielectric Withstanding Voltage (DWV)

250% of rated Voltage for 5 seconds.

Operating Temperature Range

－55℃ to +125℃

Temperature Coefficient(TC)

0±30ppm/℃

Capacitance Drift

±0.02% or ±0.02pF, whichever is greater.

Piezoelectric Effects

None

Terminal Adhesion

Temrination should not pull off,      Cemera should remain undamaged

Linear pull force exerted on axial leads soldered to each terninal 2.0lbs

Resistance to soldering heat

No mechanical damage  Capacitance change:-1.0%~+2.0%       Q>500     I.R.>10 G Ohms breakdown voltage:2.5 X WVDC

Preheat device to 150°C-180°C for 60sec  DIP in 260°C±5°C solder for 10±1 sec.Measure after 24±2 hours cooling period

Thermal Shock

No mechanical damage 

 Capacitance change:±5% or 0.5pF max  

Q>500    I.R.>10 G ohms    

breakdown voltage:2.5 X WVDC

MIL-STD-202, Method 107, Condition A.   At the maximum rated temperature(-55℃ and 125℃) stay 30 minutes.The time of removing shall be not more than 3 minutes. Perform the five cycles.

Humidity  (steady state)

No mechanical damage  Capacitance 

change:±5% or 0.5pF max  Q>300       I.R.>10 Gohms   breakdown voltage:2.5 X WVDC

MIL-STD-202.Method 106

Low voltage hummidity

No mechanical damage 

Capacitance change:±3% or 0.3pF max  Q>300  I.R.>10  G ohms

 breakdown voltage:2.5 X WVDC

MIL-STD-202, Method 103, Condition A, with 1.5 Volts D.C. applied while subjected to an environment of 85°C with 85% relative humidity for 240 hours min.

Life

No mechanical damage  Capacitance change:±2% or 0.5pF max  Q>500    I.R.>10 G ohms  breakdown voltage:2.5 X WVDC

MIL-STD-202, Method 108, for 1000 hours, at 125℃. 200% Rated voltage D.C. applied.

Chip Dimension

0.080 (2.0)

0.050(1.20)

0.057(1.45)